BoilingPoint:-57°
EINECSNumber:213-598-5
MeltingPoint:-157°
MolecularWeight:46.14
AlternativeName:1MS
SpecificGravity:0.628
HMISKey:3-4-3-X
Formula:CH6Si
TSCA:TSCA
Application:Plasmapolymerizationyieldsdryprocessphotoresist.1
Intermediateforpoly(methylsilane)precursortosiliconcarbide.2
DepositsSiConSiandGeat400-500?C.3
Sourceforhydrogenatedamorphoussiliconcarbidefilms.4
Reference:1.Dabbagh,G.etal.J.Photopolym.Sci.Tech.1998,11,651.
2.Fhang,Z.etal.J.Am.Ceram.Soc.1991,74,670.
3.Takatsuka,T.etal.Appl.Surf.Sci.2000,162,156.
4.Lee,M.etal.in“ChemicalAspectsofElectronicCeramicsProcessing”Arkles,B.ed.,MRSProc.1998,495,153.
AdditionalProperties:130
Dipolemoment:0.73debye?Hcomb:-624kcal/mole
Criticaltemperature:79.3??Hform:-7kcal/mole
?Hvap:4.6kcal/moleVaporpressure
Vaporpressure
